| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 15 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 3A |
| hFE Min | 10 @3A, 4V |
| hFE Max | 25 |
| Input Power (Max) | 15 W |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 15000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 6.2 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
●General features
●■ This device is qualified for automotive application
●■ Surface-mounting TO-252 power package in tape & reel
●■ In compliance with the 2002/93/EC European Directive
●Applications
●■ General purpose switching and amplifier transistor
ST Microelectronics
13 Pages / 0.39 MByte
ST Microelectronics
3 Pages / 0.11 MByte
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