| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 10 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -350 V |
| Current Rating | -1.00 A |
| Case/Package | TO-252-3 |
| Number of Positions | 4 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 15 W |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| Continuous Collector Current | 1A |
| hFE Min | 30 @300mA, 10V |
| Input Power (Max) | 1.56 W |
| DC Current Gain (hFE) | 10 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1560 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP MJD5731T4G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1560 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.
ON Semiconductor
2 Pages / 0.19 MByte
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6 Pages / 0.2 MByte
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7 Pages / 0.07 MByte
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5 Pages / 0.04 MByte
Motorola
1A, 350V, PNP, Si, POWER TRANSISTOR, CASE 369A-13, DPAK-3
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