| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 15.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 150 W |
| Breakdown Voltage (Collector to Emitter) | 200 V |
| Continuous Collector Current | 15A |
| hFE Min | 400 @10A, 5V |
| hFE Max | 15000 |
| Input Power (Max) | 150 W |
| DC Current Gain (hFE) | 400 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 4.9 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The MJH11020G is a 200V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for use as general purpose amplifiers, low frequency switching and motor control applications. The transistor has monolithic construction.
● High DC current gain
● Low collector emitter saturation voltage
● Collector-emitter sustaining voltage(Vce (sus) = 200VDC minimum)
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