| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 2 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -10.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 75 W |
| Gain Bandwidth Product | 2 MHz |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Thermal Resistance | 1.67℃/W (RθJC) |
| Continuous Collector Current | 10A |
| hFE Min | 20 @4A, 4V |
| Input Power (Max) | 75 W |
| DC Current Gain (hFE) | 2 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 75000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.28 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.28 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS
●MJE2955T (PNP)
●MJE3055T (NPN)
●These devices are designed for use in general−purpose amplifier and switching applications.
●Features
●•DC Current Gain Specified to 10 A
●•High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min) @ IC= 500 mAdc
●•Pb−Free Packages are Available
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