TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -40.0 V |
Current Rating | -4.00 A |
Case/Package | TO-126-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 40 W |
Breakdown Voltage (Collector to Emitter) | 40 V |
Continuous Collector Current | 4A |
hFE Min | 40 @1A, 1V |
Input Power (Max) | 40 W |
DC Current Gain (hFE) | 40 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 4000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Width | 2.66 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
Plastic Medium−Power PNP Silicon Transistor
●This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry.
●Features
●• DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc
●• MJE371 is Complementary to NPN MJE521
●• Pb−Free Package is Available
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