| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 15.0 A |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 200 W |
| Gain Bandwidth Product | 30 MHz |
| Breakdown Voltage (Collector to Emitter) | 260 V |
| Thermal Resistance | 0.625℃/W (RθJC) |
| Continuous Collector Current | 15A |
| hFE Min | 75 @5A, 5V |
| hFE Max | 150 |
| Input Power (Max) | 200 W |
| DC Current Gain (hFE) | 175 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 20.3 mm |
| Size-Width | 5.3 mm |
| Size-Height | 26.4 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The MJL3281AG is a NPN complementary Bipolar Power Transistor with superior gain linearity.
● Complement to MJL1302A
● Exceptional Safe Operating Area
● Gain Matching within 10% from 50mA to 3A
● Excellent Gain Linearity
● High BVCEO
● High Frequency
● Reliable Performance at Higher Powers
● Accurate Reproduction of Input Signal
● Greater Dynamic Range
● High Amplifier Bandwidth
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