| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -50.0 V |
| Current Rating | -100 mA |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Polarity | PNP |
| Power Dissipation | 0.4 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 60 @5mA, 10V |
| Input Power (Max) | 246 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.01 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The MMUN2112LT1G is a PNP Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
● Simplifies circuit design
● Reduces board space
● Reduces component count
ON Semiconductor
12 Pages / 0.09 MByte
ON Semiconductor
20 Pages / 0.17 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
12 Pages / 0.11 MByte
Motorola
PNP SILICON BIAS RESISTOR TRANSISTOR
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