| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 150 MHz |
| Number of Pins | 4 Pin |
| Case/Package | SOT-89-3 |
| Polarity | NPN |
| Power Dissipation | 4.46 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 5.25A |
| hFE Min | 200 @100mA, 2V |
| hFE Max | 500 @100mA, 2V |
| Input Power (Max) | 2.4 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 4460 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 2.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This NPN ZXTN19100CZTA general purpose bipolar junction transistor from Diodes Zetex is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
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