| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 100 mA |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Polarity | NPN |
| Power Dissipation | 400 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 80 @5mA, 10V |
| hFE Max | 80 |
| Input Power (Max) | 246 mW |
| DC Current Gain (hFE) | 80 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The MMUN2233LT1G is a NPN Transistor with monolithic bias resistor network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
● Simplifies circuit design
● Reduces component count
● AEC-Q101 Qualified
● PPAP capable
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