| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SMD-6 |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.019 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.3 W |
| Threshold Voltage | 1.2 V |
| Drain to Source Voltage (Vds) | 25 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 4.4 ns |
| Input Capacitance (Ciss) | 340pF @12.5V(Vds) |
| Input Power (Max) | 2.3 W |
| Fall Time | 1.7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.3W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 2 mm |
| Size-Height | 0.8 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This 25-V, 19-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2-mm × 2-mm SON package offers excellent thermal performance for the size of the package.
● Ultra-Low Qg and Qgd
● Low Thermal Resistance
● Lead-Free Terminal Plating
● RoHS Compliant
● Halogen Free
● SON 2-mm × 2-mm Plastic Package
● APPLICATIONS
● DC-DC Converters
● Battery and Load Management Applications
●All other trademarks are the property of their respective owners
TI
N-Channel NexFET⢠Power MOSFETs
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