TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 500 mA |
Case/Package | TO-226-3 |
Output Voltage | 60 V |
Output Current | 500 mA |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 60 V |
Thermal Resistance | 200℃/W (RθJA) |
Continuous Collector Current | 0.5A |
hFE Min | 10000 @100mA, 5V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 10000 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
Input Voltage | 10 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 5.2 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Amplify your current with the NPN MPSA27G Darlington transistor, developed by ON Semiconductor. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@100mA@5 V|10000@10mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. This Darlington transistor array"s maximum emitter base voltage is 10 V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.
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