| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 500 mA |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 10000 |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 10000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This NPN MPSA27RLRAG Darlington transistor from ON Semiconductor amplifies your current and yields a much higher current gain than other transistors. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@100mA@5 V|10000@10mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. This Darlington transistor array"s maximum emitter base voltage is 10 V. Its maximum power dissipation is 625 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.
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