MS1261 Datasheet PDF - Microsemi

Manufacturer:	Microsemi
Category:	BJTs
Case Package:	M-122
Description:	RF Power Bipolar Transistor, 1Element, Ultra High Frequency Band, Silicon, NPN, 0.28INCH, PLASTIC, M122, 4Pin
Documentation:	MS1261 Datasheet (4 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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MS1261 Specifications

TYPE	DESCRIPTION
Mounting Style	Chassis
Number of Pins	4 Pin
Case/Package	M-122
Power Dissipation	34000 mW
Breakdown Voltage (Collector to Emitter)	18 V
Gain	12 dB
hFE Min	20 @250mA, 5V
Input Power (Max)	34 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	34000 mW