MS2200 Datasheet PDF - Microsemi

Manufacturer:	Microsemi
Category:	BJTs
Case Package:	M-102
Description:	RF Power Bipolar Transistor, 1Element, Ultra High Frequency Band, Silicon, NPN, 0.400 X 0.5INCH, HERMETIC SEALED, M102, 4Pin
Documentation:	MS2200 Datasheet (6 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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MS2200 Specifications

TYPE	DESCRIPTION
Mounting Style	Screw
Number of Pins	5 Pin
Case/Package	M-102
Power Dissipation	1167000 mW
Breakdown Voltage (Collector to Emitter)	65 V
Gain	9.7 dB
hFE Min	20 @5A, 5V
Input Power (Max)	1167 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1167000 mW