MS2210 Datasheet PDF - Microsemi

Manufacturer:	Microsemi
Category:	BJTs
Case Package:	M-216
Description:	RF Power Bipolar Transistor, 1Element, L Band, Silicon, NPN, 0.400 X 0.5INCH, HERMETIC SEALED, M216, 2Pin
Documentation:	MS2210 Datasheet (6 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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MS2210 Specifications

TYPE	DESCRIPTION
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	M-216
Power Dissipation	940 W
Breakdown Voltage (Collector to Emitter)	65 V
Gain	7 dB
hFE Min	10 @5A, 5V
Input Power (Max)	940 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	940000 mW