TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | M-115 |
Power Dissipation | 218.7 W |
Breakdown Voltage (Collector to Emitter) | 65 V |
Gain | 9 dB |
Input Power (Max) | 87.5 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Operating Temperature | 200℃ (TJ) |
RF Transistor NPN 65V 2.6A 1.025GHz ~ 1.15GHz 87.5W Chassis Mount M115
Microsemi
3 Pages / 0.08 MByte
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