| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 12A |
| Rise Time | 85 ns |
| Input Capacitance (Ciss) | 410pF @25V(Vds) |
| Fall Time | 43 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 48000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Rail |
12 AMPERES 60 VOLTS RDS(on)= 180 mΩ
●This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
●• Avalanche Energy Specified
●• IDSS and VDS(on) Specified at Elevated Temperature
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