TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -12.0 A |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 300 mΩ |
Polarity | P-Channel |
Power Dissipation | 75.0 W |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 12.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
●Features
●•Silicon Gate for Fast Switching Speeds − Switching Times Specified at 100°C
●•Designer’s Data − IDSS, VDS(on), VGS(th)and SOA Specified at Elevated Temperature
●•Rugged − SOA is Power Dissipation Limited
●•Source−to−Drain Diode Characterized for Use With Inductive Loads
●•Pb−Free Package is Available
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