| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 100 V |
| Current Rating | 100 mA |
| Case/Package | TO-264-3 |
| Polarity | N-CH |
| Power Dissipation | 300W (Tc) |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 100 A |
| Rise Time | 490 ns |
| Input Capacitance (Ciss) | 10640pF @25V(Vds) |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Power MOSFET 100 Amps, 100 Volts
●N−Channel TO−264
●This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
●• Avalanche Energy Specified
●• Diode is Characterized for Use in Bridge Circuits
●• IDSS and VDS(on) Specified at Elevated Temperature
ON Semiconductor
7 Pages / 0.2 MByte
ON Semiconductor
11 Pages / 0.11 MByte
Motorola
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011Ω
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