| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SC-88-6 |
| Polarity | PNP |
| Power Dissipation | 250 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 80 |
| hFE Max | 80 @5mA, 10V |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 385 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.9 mm |
Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors
●with Monolithic Bias Resistor Network
●The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single
●device. In the MUN5111DW1T1 series,two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium.
●Features
●•Simplifies Circuit Design
●•Reduces Board Space
●•Reduces Component Count
●•Pb−Free Packages are Available
ON Semiconductor
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21 Pages / 0.19 MByte
ON Semiconductor
12 Pages / 0.1 MByte
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