| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 48 Pin |
| Supply Voltage (DC) | 2.70V (min) |
| Voltage Rating (DC) | 3.00 V |
| Operating Voltage | 2.7V ~ 3.6V |
| Case/Package | TSOP-48 |
| Supply Current | 20 mA |
| Number of Positions | 48 Position |
| Number of Bits | 8 Bit |
| Access Time | 12 µs |
| Memory Size | 128000000 B |
| Access Time(Max) | 12000 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 2.7V ~ 3.6V |
| Supply Voltage (Max) | 3.6 V |
| Supply Voltage (Min) | 2.7 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Each |
| Size-Height | 1 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The NAND128W3A2BN6E is a non-volatile NAND Flash Memory that uses the single level cell (SLC) NAND cell technology, referred to as the SLC small page family. The devices are either 128/256Mb and operate with a 3V voltage supply. The size of a page is either 528 bytes or 264 words depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the data input/output signals on a multiplexed x8 or x16 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. Each block can be programmed and erased up to 100000 cycles. To extend the lifetime of NAND flash devices it is strongly recommended to implement an error correction code. A write protect pin to provide hardware protection against program and erase operations. This device features an open-drain ready/busy output that identifies if the program/erase/read controller is currently active.
● Copy back program mode - Fast page copy without external buffering
● Status register
● Chip enable don"t care - simple interface with microcontroller
Micron
56 Pages / 0.92 MByte
Micron
60 Pages / 1.1 MByte
Micron
3 Pages / 0.22 MByte
ST Microelectronics
128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Micron
SLC NAND Flash Parallel 3V/3.3V 128M-bit 16M x 8 12us 48Pin TSOP Tube
Micron
SLC NAND Flash Parallel 3V/3.3V 128Mbit 16M x 8Bit 12us 48Pin TSOP Tray
Micron
SLC NAND Flash Parallel 3V/3.3V 128M-bit 16M x 8 12us 48Pin TSOP T/R
ST Microelectronics
SLC NAND Flash Parallel 3V/3.3V 128M-bit 16M x 8 12us 48Pin TSOP Tray
ST Microelectronics
SLC NAND Flash Parallel 3V/3.3V 128M-bit 16M x 8 12us 48Pin TSOP T/R
Micron
Ic Flash 128Mbit 50ns 48tsop
ST Microelectronics
128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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