| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-252 |
Features
● VDS =-100V,ID =-13A
● RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density celldesign for ultra low on-resistance
NCE Power
7 Pages / 0.39 MByte
NCE Power
NCE P-Channel Enhancement Mode Power MOSFET
NCE Power
NCE P-Channel Enhancement Mode Power MOSFET
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