| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220 |
Features
● VDS =-100V,ID =-18A
● RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance
NCE Power
7 Pages / 0.33 MByte
NCE Power
NCE P-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE P-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
The NCE0102 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE P-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
The NCE0103M uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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