| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-263-2 |
Features
● VDS=100V,ID =135A
● RDS(ON) <4.5mΩ@ VGS=10V
● Excellent gate charge x RDS(on)product
● Very low on-resistance RDS(on)
● 175 °C operatingtemperature
● Pb-free lead plating
●100% UIS tested
NCE Power
7 Pages / 0.31 MByte
NCE Power
NCE N-Channel Super Trench Power MOSFET
NCE Power
NCE N-Channel Super Trench Power MOSFET
NCE Power
The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switching and synchronous rectification.
NCE Power
The NCEP01T13WD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R DS(ON) and Q g . This device is ideal for high-frequency switching and synchronous rectification.
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