| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.095 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.69 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 59 V |
| Input Capacitance (Ciss) | 155pF @35V(Vds) |
| Input Power (Max) | 1.69 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.69W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
NCV8440 is a protected N-Channel power MOSFET device. The protection feature includes integrated Drain-to-Gate clamping for overvoltage protection.
●Features | | Benefits
●---|---|---
● | | | | |
● Diode Clamp Between Gate and Source
●| |
● High Energy Capability for Inductive Loads
● ESD Protection HBM 5000 V
●| |
● Low Switching Noise Generation
● Active Overvoltage Gate to Drain Clamp
●| |
● Scalable to Lower or Higher RDS(on)
●| |
● Internal Series Gate Resistance
●| |
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