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STGWA60H65DFB
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STGWA60H65DFB Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 650V 80A 375000mW 3Pin(3+Tab) TO-247 Tube
Documentation:STGWA60H65DFB Datasheet (19 Pages)Package Outline Dimension on12 Page13 Page14 Page15 Page16 Page
STGWA60H65DFB Application Note (35 Pages)
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STGWA60H65DFB Datasheet PDF (19 Pages)
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STGWA60H65DFB Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation375 W
Breakdown Voltage (Collector to Emitter)650 V
Reverse recovery time60 ns
Input Power (Max)375 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)375000 mW
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STGWA60H65DFB Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length20.15 mm
Size-Width15.75 mm
Size-Height5.15 mm
Operating Temperature-55℃ ~ 175℃
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STGWA60H65DFB Documents

STGWA60H65DFB Datasheet
ST Microelectronics
19 Pages / 1.53 MByte
STGWA60H65DFB Application Note
ST Microelectronics
35 Pages / 2.4 MByte

STGWA60H65 Documents

STGWA60H65DFB Datasheet PDF
ST Microelectronics
Trans IGBT Chip N-CH 650V 80A 375000mW 3Pin(3+Tab) TO-247 Tube
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