| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-263-3 |
| Polarity | N-CH |
| Power Dissipation | 75 W |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 46A |
| Rise Time | 103 ns |
| Fall Time | 98 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
●Features
●46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V.
●Critical DC electrical parameters specified at elevated temperature.
●Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
●175°C maximum junction temperature rating.
●High density cell design for extremely low RDS(ON).
●TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications
Fairchild
4 Pages / 0.06 MByte
Fairchild
5 Pages / 0.05 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
