NDB6030L Datasheet PDF - Fairchild

General Description

●These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

●Features

●52 A, 30 V. RDS(ON) = 0.0135 W @ VGS=10 V

●               RDS(ON) = 0.020 W @ VGS=4.5 V.

●Critical DC electrical parameters specified at elevated temperature.

●Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

●High density cell design for extremely low RDS(ON).

●175°C maximum junction temperature rating.