NDD04N60ZT4G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-252-3
Description:	DPAK N-CH 600V 4.1A
Documentation:	NDD04N60ZT4G Datasheet (9 Pages)Package Outline Dimension on7 Page 8 Page 9 Page Package Footprint Pad Layout on9 Page Part Numbering System on6 Page 9 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NDD04N60ZT4G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.8 Ω
Polarity	N-Channel
Power Dissipation	83 W
Threshold Voltage	3.9 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	4.1A
Rise Time	9 ns
Maximum Forward Voltage (Max)	1.6 V
Input Capacitance (Ciss)	640pF @25V(Vds)
Input Power (Max)	83 W
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	83W (Tc)