TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | -120 mA |
Case/Package | SOT-23-3 |
Power Rating | 360 mW |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 10 Ω |
Polarity | P-Channel |
Power Dissipation | 360 mW |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | -120 mA |
Rise Time | 6.3 ns |
Input Capacitance (Ciss) | 79pF @25V(Vds) |
Input Power (Max) | 360 mW |
Fall Time | 7.5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 360mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.92 mm |
Size-Width | 1.3 mm |
Size-Height | 0.93 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NDS0610 is a P-channel enhancement-mode FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
● Voltage controlled p-channel small signal switch
● High density cell design for low RDS (ON)
● High saturation current
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