| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -1.00 A |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 300 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 1.00 A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 195pF @10V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NDS332P is a P-channel logic level enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications such as battery powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface-mount package.
● Very low level gate drive requirements allowing direct operation
● Proprietary package design using copper lead-frame for superior thermal and electrical capabilities
● High density cell design for extremely low RDS (ON)
● Exceptional ON-resistance and maximum DC current capability
Fairchild
7 Pages / 0.24 MByte
Fairchild
7 Pages / 0.24 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
7 Pages / 0.08 MByte
Fairchild
1 Pages / 0.15 MByte
Fairchild
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild
FAIRCHILD SEMICONDUCTOR NDS332P MOSFET Transistor, P Channel, 1A, -20V, 300mohm, -4.5V, -600mV
National Semiconductor
P-Channel Logic Level Enhancement Mode Field Effect Transistor
TI
1000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
