| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.3 Ω |
| Power Dissipation | 0.5 W |
| Threshold Voltage | 600 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 195pF @10V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The NDS332P is a P-channel logic level enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications such as battery powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface-mount package.
● Very low level gate drive requirements allowing direct operation
● Proprietary package design using copper lead-frame for superior thermal and electrical capabilities
● High density cell design for extremely low RDS (ON)
● Exceptional ON-resistance and maximum DC current capability
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