| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 3.50 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 3.50 A |
| Rise Time | 7.5 ns |
| Input Capacitance (Ciss) | 345pF @25V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.57 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The NDS9945 is a dual N-channel enhancement-mode MOSFET produced using high cell density and DMOS technology. This high density process is especially tailored to provide superior switching performance and minimize ON-state resistance. The device is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
● High density cell design for extremely low RDS (ON)
● High power and current handling capability in a widely used surface-mount package
● ±20V Gate to source voltage
● 3.5A Continuous drain current
● 10A Pulsed drain current
Fairchild
5 Pages / 0.07 MByte
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