| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -5.90 A |
| Case/Package | TO-261-4 |
| Power Rating | 3 W |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.05 Ω |
| Polarity | P-Channel |
| Power Dissipation | 3 W |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | -30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | -5.90 A |
| Rise Time | 18 ns |
| Input Capacitance (Ciss) | 950pF @15V(Vds) |
| Input Power (Max) | 1.1 W |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 3W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The NDT454P is a -30V P-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed. This product is general usage and suitable for many different applications.
● High power and current handling capability
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