NDT456 Datasheet PDF - Fairchild

General Description

●Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.

●Features

● -7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V

●                RDS(ON) = 0.045 W @ VGS = -4.5 V.

● High density cell design for extremely low RDS(ON).

● High power and current handling capability in a widely used surface mount package.