| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -7.30 A |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.026 Ω |
| Polarity | P-Channel |
| Power Dissipation | 3 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | -30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 7.50 A |
| Rise Time | 65 ns |
| Input Capacitance (Ciss) | 1440pF @15V(Vds) |
| Input Power (Max) | 1.1 W |
| Fall Time | 70 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The NDT456P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.
● High density cell design for extremely low RDS (ON)
● High power and current handling capability
● ±20V Gate-source voltage
Fairchild
1 Pages / 0.11 MByte
Fairchild
8 Pages / 0.8 MByte
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1 Pages / 0.06 MByte
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1 Pages / 0.14 MByte
Fairchild
P-Channel Enhancement Mode Field Effect Transistor
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Trans MOSFET P-CH 30V 7.5A 4Pin(3+Tab) SOT-223 T/R
TI
7.5A, 30V, 0.03ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261
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