NGD15N41ACLT4G Datasheet PDF - ON Semiconductor

N−Channel DPAK, D2PAK and TO−220

●This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

●Features

●• Ideal for Coil−on−Plug Applications

●• DPAK Package Offers Smaller Footprint and Increased Board Space

●• Gate−Emitter ESD Protection

●• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load

●• Integrated ESD Diode Protection

●• New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area

●• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices

●• Low Saturation Voltage

●• High Pulsed Current Capability

●• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)

●• These are Pb−Free Devices