| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Dissipation | 40000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 70 ns |
| Input Power (Max) | 40 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
The NGTB10N60FG IGBT transistor from ON Semiconductor is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
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