| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 160 MHz |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223-4 |
| Number of Positions | 4 Position |
| Polarity | PNP |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 3A |
| hFE Min | 200 @1A, 1V |
| hFE Max | 400 @1A, 1V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
ON Semiconductor has the solution to your circuit"s high-voltage requirements with their PNP NJV4030PT1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
ON Semiconductor
5 Pages / 0.1 MByte
ON Semiconductor
204 Pages / 1.12 MByte
ON Semiconductor
9 Pages / 0.53 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
