| TYPE | DESCRIPTION |
|---|
| Frequency | 18GHz ~ 40GHz |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 4.50V (min) |
| Case/Package | Die |
| Number of Channels | 1 Channel |
| Power Dissipation | 1.45 W |
| Gain | 19 dB |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1450 mW |
| Supply Voltage (Max) | 5.5 V |
| Supply Voltage (Min) | 4.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Operating Temperature | -55℃ ~ 85℃ |
Product Details
●The HMC635 is a GaAs PHEMT MMIC Driver Amplifier die which operates between 18 and 40 GHz. The amplifier provides 19.5 dB of gain, +29 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 280 mA from a +5V supply. Ideal as a driver amplifier for microwave radio applications, or as an LO driver for mixers operating between 18 and 40 GHz, the HMC635 is capable of providing up to +24 dBm of saturated output power at 15% PAE. The amplifier’s I/Os are DC blocked and internally matched to 50 Ohms making it ideal for integration into Multi-Chip-Modules (MCMs). All data is taken with die connected at input and output RF ports via two 1 mil wedge bonds of 500μm length.
●Applications
● Point-to-Point Radios
● Point-to-Multi-Point Radios & VSAT
● LO Driver for Mixers
● Military & Space
●### Features and Benefits
● Gain: 19.5 dB
● P1dB: +23 dBm
● Output IP3: +29 dBm
● Saturated Power:
●+24 dBm @ 15% PAE
● Supply Voltage: +5V @ 280 mA
● 50 Ohm Matched Input/Output<
● Die Size: 1.95 x 0.84 x 0.10 mm
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