| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Power Dissipation | 156 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 166 ns |
| Input Power (Max) | 156 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 156000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.08 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This NGTB15N120FLWG IGBT transistor from ON Semiconductor will work perfectly in your circuit. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 156000 mW. This product comes in rail packaging to keep individual parts separated and protected. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
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