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NGTB35N65FL2WG
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NGTB35N65FL2WG Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 650V 70A 300000mW 3Pin(3+Tab) TO-247 Tube
Documentation:NGTB35N65FL2WG Datasheet (10 Pages)Package Outline Dimension on9 Page
Part Numbering System on2 Page10 Page
NGTB35N65FL2WG Application Note (8 Pages)
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NGTB35N65FL2WG Datasheet PDF (10 Pages)
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NGTB35N65FL2WG Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Number of Positions3 Position
Power Dissipation300 W
Breakdown Voltage (Collector to Emitter)650 V
Reverse recovery time68 ns
Input Power (Max)300 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)300 W
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NGTB35N65FL2WG Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length16.26 mm
Size-Width5.3 mm
Size-Height21.08 mm
Operating Temperature-55℃ ~ 175℃ (TJ)
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NGTB35N65FL2WG Documents

NGTB35N65FL2WG Datasheet
ON Semiconductor
10 Pages / 0.2 MByte
NGTB35N65FL2WG Other Datasheet PDF
ON Semiconductor
14 Pages / 1.89 MByte
NGTB35N65FL2WG Application Note
ON Semiconductor
8 Pages / 0.09 MByte
NGTB35N65FL2WG Notice File
ON Semiconductor
3 Pages / 0.72 MByte

NGTB35N65FL2 Documents

NGTB35N65FL2WG Datasheet PDF
ON Semiconductor
Trans IGBT Chip N-CH 650V 70A 300000mW 3Pin(3+Tab) TO-247 Tube
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