| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 650 V |
| Current Rating | 4.50 A |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.85 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 4.50 A |
| Rise Time | 2.5 ns |
| Input Capacitance (Ciss) | 490pF @25V(Vds) |
| Input Power (Max) | 50 W |
| Fall Time | 9.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 50W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.31 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.57 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 600 V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO263-3-2
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13 Pages / 0.41 MByte
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14 Pages / 0.4 MByte
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1 Pages / 0.12 MByte
Siemens Semiconductor
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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