TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Power Dissipation | 454 W |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Reverse recovery time | 163 ns |
Input Power (Max) | 454 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 454000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NGTB40N120S3WG features a robust and cost effective Ultra Field Stop trench construction that provides superior performance in demanding switching applications, offering low switching losses. This IGBT is well suited to applications requiring fast switching with low forward voltage diodes, such as phase-shifted full bridge configurations. Built in free wheeling diode with a low forward voiltage.
● Extremely efficient trench with Field Stop Technology
● 175°C max operating temperature
● Optimised for high speed siwtching
● Low forward voltage reverse diode
ON Semiconductor
12 Pages / 0.21 MByte
ON Semiconductor
11 Pages / 0.15 MByte
ON Semiconductor
4 Pages / 0.75 MByte
ON Semiconductor
Trans IGBT Chip N-CH 1200V 160A 454000mW 3Pin(3+Tab) TO-247 Tube
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