| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Halogen Free Status | Halogen Free |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.09 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.74 W |
| Threshold Voltage | 1.75 V |
| Input Capacitance | 155 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 9A |
| Rise Time | 500 ns |
| Input Capacitance (Ciss) | 250pF @40V(Vds) |
| Input Power (Max) | 1.74 W |
| Fall Time | 1150 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.74W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.22 mm |
| Size-Width | 6.73 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NID9N05ACLT4G is a N-channel clamped Power MOSFET offers 52 to 59V drain source voltage and 9A continuous drain current.
● High energy capability for inductive loads
● Low switching noise generation
● Diode clamp between gate and source
● ESD protection - HBM 5000V
● Active overvoltage gate to drain clamp
● Scalable to lower or higher RDS (ON)
● Internal series gate resistance
● -55 to 175°C Operating temperature range
ON Semiconductor
7 Pages / 0.11 MByte
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