| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package | SOD-523 |
| Number of Positions | 2 Position |
| Forward Voltage | 700mV @200mA |
| Power Dissipation | 200 mW |
| Thermal Resistance | 600℃/W (RθJA) |
| Reverse recovery time | 3 ns |
| Max Repetitive Reverse Voltage (Vrrm) | 40V |
| Forward Current | 250 mA |
| Max Forward Surge Current (Ifsm) | 2 A |
| Max Reverse Leakage Current (Ir) | 0.55uA |
| Maximum Forward Voltage (Max) | 700 mV |
| Forward Current (Max) | 250 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 0.8 mm |
| Size-Height | 0.6 mm |
| Operating Temperature | -55℃ ~ 150℃ |
| Minimum Packing Quantity | 8000 |
The NSR0240V2T1G is a Schottky Barrier Diode optimized for very low forward voltage drop and low leakage current and used in a wide range of dc-dc converter, clamping and protection applications in portable devices. Its miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
● Very high switching speed
● 4pF Low capacitance
● Halogen-free
ON Semiconductor
4 Pages / 0.04 MByte
ON Semiconductor
11 Pages / 0.1 MByte
ON Semiconductor
4 Pages / 0.11 MByte
ON Semiconductor
1 Pages / 0.26 MByte
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