| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363-6 |
| Number of Positions | 6 Position |
| Polarity | PNP |
| Power Dissipation | 380 mW |
| Breakdown Voltage (Collector to Emitter) | 65 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 220 @2mA, 5V |
| Input Power (Max) | 380 mW |
| DC Current Gain (hFE) | 0 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 380 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Do you require a transistor in your circuit operating in the high-voltage range? This NST65010MW6T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 0 V. Its maximum power dissipation is 0 mW. It has a maximum collector emitter voltage of 0 V and a maximum emitter base voltage of 0 V. This bipolar junction transistor has a minimum operating temperature of 0 °C and a maximum of 50 °C.
ON Semiconductor
5 Pages / 0.06 MByte
ON Semiconductor
7 Pages / 0.13 MByte
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