| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223-4 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 6A |
| hFE Min | 120 @1A, 2V |
| Input Power (Max) | 800 mW |
| DC Current Gain (hFE) | 120 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN NSV60601MZ4T1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
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