TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 238 mA |
Case/Package | SC-75-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.5 Ω |
Polarity | N-Channel |
Power Dissipation | 300 mW |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20 V |
Breakdown Voltage (Gate to Source) | ±10.0 V |
Continuous Drain Current (Ids) | 238 mA |
Rise Time | 15 ns |
Input Capacitance (Ciss) | 20pF @5V(Vds) |
Input Power (Max) | 300 mW |
Fall Time | 60 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 1.65 mm |
Size-Width | 0.9 mm |
Size-Height | 0.8 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 20V 238mA (Tj) 300mW (Tj) Surface Mount SC-75, SOT-416
ON Semiconductor
2 Pages / 0.19 MByte
ON Semiconductor
6 Pages / 0.18 MByte
ON Semiconductor
6 Pages / 0.04 MByte
ON Semiconductor
1 Pages / 0.15 MByte
ON Semiconductor
Trans MOSFET N-CH 20V 0.238A 3Pin SOT-416 T/R
Leshan Radio
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
ON Semiconductor
Small Signal MOSFET 20V 238mA 1.5Ω Single N-Channel SC-75 with ESD Protection, SC-75 (SOT-416) 3 LEAD, 3000-REEL
Leshan Radio
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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