NTB30N06T4G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-263-3
Description:	D2PAK N-CH 60V 27A
Documentation:	NTB30N06T4G Datasheet (7 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on6 Page 7 Page Package Footprint Pad Layout on6 Page Part Numbering System on1 Page 5 Page 7 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTB30N06T4G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Voltage Rating (DC)	60.0 V
Current Rating	27.0 A
Case/Package	TO-263-3
Drain to Source Resistance (on) (Rds)	42.0 mΩ
Polarity	N-Channel
Power Dissipation	88.2W (Tc)
Input Capacitance	1.20 nF
Gate Charge	46.0 nC
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	27.0 A
Input Capacitance (Ciss)	1200pF @25V(Vds)
Power Dissipation (Max)	88.2W (Tc)